US1M-E3/5AT

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US1M-E3/5AT datasheet

Маркировка

US1M-E3/5AT
Производитель

General Semiconductor
Описание

Vishay Intertechnology US1M-E3/5AT Capacitance @ Vr, F: - Configuration: Single Current - Average Rectified (io): 1A Current - Reverse Leakage @ Vr: 10?µA @ 1000V Diode Type: Standard Forward Continuous Current: 1 A Forward Current If(av): 1A Forward Surge Current Ifsm Max: 30A Forward Voltage Drop: 1.7 V Forward Voltage Vf Max: 1.7V ID_COMPONENTS: 2655680 Max Surge Current: 30 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Product: Ultra Fast Recovery Rectifier Recovery Time: 75 ns Repetitive Reverse Voltage Vrrm Max: 1kV Reverse Current Ir: 10 uA Reverse Recovery Time (trr): 75ns Reverse Recovery Time Trr Max: 75ns Reverse Voltage: 1000 V Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 1000V (1kV) Voltage - Forward (vf) (max) @ If: 1.7V @ 1A Forward Voltage: 1.70 V Number of Pins: 2 Alternative: VISHAY/DALE US1M-E3/5AT,VISHAY SILICONIX US1M-E3/5AT,VISHAY SPRAGUE US1M-E3/5AT,TEMIC US1M-E3/5AT,DALE/VISHAY US1M-E3/5AT,VISHAY/VITRAMON US1M-E3/5AT,VISH US1M-E3/5AT,VIS US1M-E3/5AT,BC COMPONENTS US1M-E3/5AT,VISHAY ROEDERSTEIN US1M-E3/5AT,SPRAGUE/VISHAY US1M-E3/5AT,GENERAL SEMICONDUCTOR US1M-E3/5AT,VISHAY BC COMPONENTS US1M-E3/5AT,GENERAL INSTRUMENT US1M-E3/5AT,GEN SEMI US1M-E3/5AT,Vishay Semiconductors US1M-E3/5AT,CERA-MITE US1M-E3/5AT,BEYSCHLAG US1M-E3/5AT,VISHAY BEYSCHLAG US1M-E3/5AT,VISHAY GENERAL SEMICONDUCTOR US1M-E3/5AT,VISHAY THIN FILM US1M-E3/5AT,TEM US1M-E3/5AT,BC COMPONENTS VISHAY US1M-E3/5AT,VISHAY/TELEFUNKEN US1M-E3/5AT,VISHAY DRALORIC US1M-E3/5AT
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